dsa 120 c 150 qb schottky diode gen 2 symbol definition r a t i n g s features / advantages: typ. max. i fsm i r a v 600 i a v f 0.93 r 0.40 k/w v r = 1 2 3 min. 60 t = 10 ms applications: v rrm v 150 1.8 t vj vc = t vj c =ma 5 package: part number v r = t vj =c i f =a v t c = 150c d = p tot 375 w t c c = t vj 175 c -55 v i rrm = = 150 60 60 t vj = 45c dsa 120 c 150 qb v a 150 v 150 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current conditions unit 1.13 t vj c =25 c j j unction capacitance v= v; 24 t 125 v f0 v 0.51 t vj = 175c r f 3.9 f = 1 mhz = c 25 m v 0.80 t vj =c i f =a v 60 1.03 i f =a 120 i f =a 120 2x threshold voltage slope resistance for power loss calculation only backside: cathode (50 hz), sine v f = 0.80 v housing: high performance schottky diode low loss and soft recovery common cathode to-3p r compatible with to-247 thermal resistance junction to case thjc rectangular 0.5 very low vf extremely low switching losses low irm values improved thermal behaviour high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters fav average forward current fav 125 ixys reserves the right to change limits, conditions and dimensions. 20100219a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
dsa 120 c 150 qb i rms a per pin 70 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 5 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit i is typically limited by: 1. pin-to-chip re sistance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a non-isol ated backside, the whole current capability can be used by con necting the backside. f c n 120 mounting force with clip 20 ordering delivering mode base qty code key standard part name dsa 120 c 150 qb 501788 tube 30 product mar k i n g date code part no. logo order code ixys abcd d s a 120 c 150 qb part number diode schottky diode low vf common cathode to-3p (3) = = = 1) 1 ) marking on product DSA120C150QB current rating [a] reverse voltage [v] = = = = rms ixys reserves the right to change limits, conditions and dimensions. 20100219a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
dsa 120 c 150 qb outlines to-3p ixys reserves the right to change limits, conditions and dimensions. 20100219a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
dsa 120 c 150 qb 0 50 100 150 200 0 20 40 60 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 20 40 60 80 100 120 0 50 100 150 0.001 0.01 0.1 1 10 100 10 30 50 70 0 204060 0 10 20 30 40 50 60 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0 50 100 150 100 1000 10000 t vj =175c 150c 125c 100c 25c t vj = 25c d = dc 0.5 0.33 0.25 0.17 0.08 50c 75c i f [a] v f [v] i r [ma] v r [v] v r [v] c t [pf] t c [c] i f(av) [a] p (av) [w] z thjc [k/w] t [s] note: all curves are per diode fig. 1 maximum forward voltage drop characteristics fig. 2 typ. reverse current i r vs. reverse voltage v r fig. 3 typ. junction capacitance c t vs. reverse voltage v r fig. 4 average forward current i f(av) vs. case temperature t c fig. 5 forward power loss characteristics fig. 6 transient thermal impedance junction to case at various duty cycles i f(av) [a] t vj = 150c 125c 25c r thi t i 0.022 0.0002 0.082 0.0032 0.104 0.026 0.165 0.208 0.027 0.79 ixys reserves the right to change limits, conditions and dimensions. 20100219a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
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